Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents
Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U =...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute for Nuclear Research, National Academy of Sciences of Ukraine
2015-10-01
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| Series: | Âderna Fìzika ta Energetika |
| Subjects: | |
| Online Access: | http://jnpae.kinr.kiev.ua/16.3/html/16.3.0238.html |
| Summary: | Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V) is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA) irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction. |
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| ISSN: | 1818-331X 2074-0565 |