High mobility sputtered InSb film by blue laser diode annealing

High mobility sputtered InSb film by blue laser diode annealing

InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film...

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Main Authors: C. J. Koswaththage, T. Higashizako, T. Okada, T. Sadoh, M. Furuta, B. S. Bae, T. Noguchi
Format: Article
Language:English
Published: AIP Publishing LLC 2019-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5087235
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spelling doaj-40f74aa9019a46a6b09ee1f238014ae32020-11-25T01:26:09ZengAIP Publishing LLCAIP Advances2158-32262019-04-0194045009045009-510.1063/1.5087235027904ADVHigh mobility sputtered InSb film by blue laser diode annealingC. J. Koswaththage0T. Higashizako1T. Okada2T. Sadoh3M. Furuta4B. S. Bae5T. Noguchi6Faculty of Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, JapanFaculty of Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, JapanFaculty of Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, JapanGraduate School of Information Science and Electrical Engineering, Kyushu University, Fukuoka 819-0395, JapanDepartment of Environmental Science and Engineering, Kochi University of Technology, Kochi 782-8502, JapanDepartment of Display, Hoseo University, Cheonan, Asan 31499, South KoreaFaculty of Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, JapanInSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.http://dx.doi.org/10.1063/1.5087235
collection DOAJ
language English
format Article
sources DOAJ
author C. J. Koswaththage
T. Higashizako
T. Okada
T. Sadoh
M. Furuta
B. S. Bae
T. Noguchi
spellingShingle C. J. Koswaththage
T. Higashizako
T. Okada
T. Sadoh
M. Furuta
B. S. Bae
T. Noguchi
High mobility sputtered InSb film by blue laser diode annealing
AIP Advances
author_facet C. J. Koswaththage
T. Higashizako
T. Okada
T. Sadoh
M. Furuta
B. S. Bae
T. Noguchi
author_sort C. J. Koswaththage
title High mobility sputtered InSb film by blue laser diode annealing
title_short High mobility sputtered InSb film by blue laser diode annealing
title_full High mobility sputtered InSb film by blue laser diode annealing
title_fullStr High mobility sputtered InSb film by blue laser diode annealing
title_full_unstemmed High mobility sputtered InSb film by blue laser diode annealing
title_sort high mobility sputtered insb film by blue laser diode annealing
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-04-01
description InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.
url http://dx.doi.org/10.1063/1.5087235
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AT mfuruta highmobilitysputteredinsbfilmbybluelaserdiodeannealing
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