Toward an innovative stochastic modeling of electric charges loss through dielectric
This paper deals with new stochastic modeling of very low tunneling currents in Non-Volatile Memories. For this purpose, we first develop current measurement method based on Floating Gate technique. In order to reach the long time behavior of electrical dynamic, we aim at using very basic tools (pow...
Main Authors: | Micolau G., Postel-Pellerin J., Chiquet P., Joelson M., Abbas C., Boyer D., Ginoux C. |
---|---|
Format: | Article |
Language: | English |
Published: |
EDP Sciences
2016-01-01
|
Series: | E3S Web of Conferences |
Online Access: | http://dx.doi.org/10.1051/e3sconf/20161204004 |
Similar Items
-
A global modeling approach of the leakage phenomena in dielectrics
by: Postel-Pellerin Jérémy, et al.
Published: (2019-01-01) -
Fiabilité des Mémoires Non-Volatiles de type Flash en architectures NOR et NAND
by: Postel-Pellerin, Jérémy
Published: (2008) -
Wideband electrical characterization of multilayer low-loss dielectric materials
by: Addington, J. Shawn
Published: (2014) -
Energy loss of a charged particle during its interaction with a dielectric cylinder
by: Yu.O. Averkov, et al.
Published: (2020-03-01) -
Structural composite laminate materials with low dielectric loss: Theoretical model towards dielectric characterization
by: Maëlle Sergolle, et al.
Published: (2020-11-01)