Electronic Origin of Defect States in Fe-Doped LiNbO3 Ferroelectrics

We investigate the role of Fe in the electronic structure of ferroelectric LiNbO3 by density-functional theory calculations. We show that Fe2+ on the Li site (Fe2+Li) features a displacement opposite to the direction of spontaneous polarization and acts as a trigger for the bulk photovoltaic (PV) ef...

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Bibliographic Details
Main Authors: Yuji Noguchi, Ryotaro Inoue, Masaru Miyayama
Format: Article
Language:English
Published: Hindawi Limited 2016-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2016/2943173
Description
Summary:We investigate the role of Fe in the electronic structure of ferroelectric LiNbO3 by density-functional theory calculations. We show that Fe2+ on the Li site (Fe2+Li) features a displacement opposite to the direction of spontaneous polarization and acts as a trigger for the bulk photovoltaic (PV) effect. In contrast to Fe3+ on the Li site that forms the defect states (1e, a, and 2e) below the conduction band minimum, the reduction from Fe3+ to Fe2+ accompanied by a lattice relaxation markedly lowers only the a state (dz2) owing to a strong orbital hybridization with Nb-4d. The a state of Fe2+Li provides the highest electron-occupied defect state in the middle of the band gap. A reduction treatment of Fe-LN is expected to increase the concentration of Fe2+ and therefore to enhance the PV effect under visible light illumination.
ISSN:1687-8108
1687-8124