Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP

Abnormal Positive Bias Temperature Instability Induced by Dipole Doped N-Type MOSCAP

This work performs fundamental electrical measurements and a positive bias temperature instability (PBTI) test on an N-type metal oxide semiconductor capacitor (MOSCAP) and a La<sub>2</sub>O<sub>3</sub> dipole-doped N-type MOSCAP. Experimental results show that the dipole-dop...

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Bibliographic Details
Main Authors: Fu-Yuan Jin, Ting-Chang Chang, Chien-Yu Lin, Jih-Chien Liao, Fong-Min Ciou, Yu-Shan Lin, Wei-Chun Hung, Kai-Chun Chang, Yun-Hsuan Lin, Yen-Cheng Chang, Ting-Tzu Kuo
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
MOSCAP
dipole doping
PBTI
Online Access:https://ieeexplore.ieee.org/document/8784162/

Internet

https://ieeexplore.ieee.org/document/8784162/

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