Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occ...
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| Format: | Article |
| Language: | English |
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Hindawi Limited
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510213494 |