Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide

Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide

First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occ...

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Bibliographic Details
Main Author: K. F. Yarn
Format: Article
Language:English
Published: Hindawi Limited 2002-01-01
Series:Active and Passive Electronic Components
Online Access:http://dx.doi.org/10.1080/08827510213494
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spelling doaj-40408e9179174183a4c9741c091b4c552020-11-24T22:36:42ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50312002-01-0125323323710.1080/08827510213494Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature OxideK. F. Yarn0Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih Tainan Taiwan 744, ChinaFirst observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface and p-n+ junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to 105 has been obtained.http://dx.doi.org/10.1080/08827510213494
collection DOAJ
language English
format Article
sources DOAJ
author K. F. Yarn
spellingShingle K. F. Yarn
Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
Active and Passive Electronic Components
author_facet K. F. Yarn
author_sort K. F. Yarn
title Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
title_short Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
title_full Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
title_fullStr Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
title_full_unstemmed Experimental Studies of New GaAs Metal/Insulator/p-n+ Switches Using Low Temperature Oxide
title_sort experimental studies of new gaas metal/insulator/p-n+ switches using low temperature oxide
publisher Hindawi Limited
series Active and Passive Electronic Components
issn 0882-7516
1563-5031
publishDate 2002-01-01
description First observation of switching behavior is reported in GaAs metal-insulator-p-n+ structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface and p-n+ junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to 105 has been obtained.
url http://dx.doi.org/10.1080/08827510213494
work_keys_str_mv AT kfyarn experimentalstudiesofnewgaasmetalinsulatorpnswitchesusinglowtemperatureoxide
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