Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

Phase change memory (PCM) formed by Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using...

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Bibliographic Details
Main Authors: Panni Wang, Yihan Chen, Suwen Li, Salahuddin Raju, Longyan Wang, Lining Zhang, Xinnan Lin, Zhitang Song, Mansun Chan
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ge₂Sb₂Te₅ (GST)
phase change memory (PCM)
carbon nanotube (CNT)
Online Access:https://ieeexplore.ieee.org/document/8000557/

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