Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode

Phase change memory (PCM) formed by Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using...

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Main Authors: Panni Wang, Yihan Chen, Suwen Li, Salahuddin Raju, Longyan Wang, Lining Zhang, Xinnan Lin, Zhitang Song, Mansun Chan
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ge₂Sb₂Te₅ (GST)
phase change memory (PCM)
carbon nanotube (CNT)
Online Access:https://ieeexplore.ieee.org/document/8000557/
id doaj-400a47fdc0a04e0eb4775f92cac7674b
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spelling doaj-400a47fdc0a04e0eb4775f92cac7674b2021-03-29T18:44:57ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015536236610.1109/JEDS.2017.27348588000557Low Power Phase Change Memory With Vertical Carbon Nanotube ElectrodePanni Wang0https://orcid.org/0000-0001-8559-2727Yihan Chen1Suwen Li2Salahuddin Raju3https://orcid.org/0000-0002-6492-489XLongyan Wang4Lining Zhang5Xinnan Lin6Zhitang Song7Mansun Chan8Hong Kong University of Science and Technology, Hong KongHong Kong University of Science and Technology, Hong KongHong Kong University of Science and Technology, Hong KongHong Kong University of Science and Technology, Hong KongHong Kong University of Science and Technology, Hong KongHong Kong University of Science and Technology, Hong KongShenzhen Key Lab of Advanced Electron Device and Integration, School of Electronic and Computer Engineering, Peking University of Shenzhen Graduate School, Shenzhen, ChinaState Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science, Shenzhen, ChinaHong Kong University of Science and Technology, Hong KongPhase change memory (PCM) formed by Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using nickel catalyst at a low temperature. Reasonable contact characteristics between the CNTs and GST are achieved without material compatibility problem. Due to the small contact size of the CNT to the phase change material, a significant reduction in programming power is achieved compared to metal contact at the same via size. The temperature simulation result shows that the CNT filled via helps to reduce the programming area. The fabricated PCM on CNT filled via is able to endure more than 10<sup>4</sup> SET/RESET cycles without observable degradation.https://ieeexplore.ieee.org/document/8000557/Ge₂Sb₂Te₅ (GST)phase change memory (PCM)carbon nanotube (CNT)
collection DOAJ
language English
format Article
sources DOAJ
author Panni Wang
Yihan Chen
Suwen Li
Salahuddin Raju
Longyan Wang
Lining Zhang
Xinnan Lin
Zhitang Song
Mansun Chan
spellingShingle Panni Wang
Yihan Chen
Suwen Li
Salahuddin Raju
Longyan Wang
Lining Zhang
Xinnan Lin
Zhitang Song
Mansun Chan
Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode
IEEE Journal of the Electron Devices Society
Ge₂Sb₂Te₅ (GST)
phase change memory (PCM)
carbon nanotube (CNT)
author_facet Panni Wang
Yihan Chen
Suwen Li
Salahuddin Raju
Longyan Wang
Lining Zhang
Xinnan Lin
Zhitang Song
Mansun Chan
author_sort Panni Wang
title Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode
title_short Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode
title_full Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode
title_fullStr Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode
title_full_unstemmed Low Power Phase Change Memory With Vertical Carbon Nanotube Electrode
title_sort low power phase change memory with vertical carbon nanotube electrode
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2017-01-01
description Phase change memory (PCM) formed by Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> (GST) on vertical carbon nanotube (CNT) filled contact plug is demonstrated in this paper. In order to achieve compatibility with the underlying process, the CNTs are synthesized using nickel catalyst at a low temperature. Reasonable contact characteristics between the CNTs and GST are achieved without material compatibility problem. Due to the small contact size of the CNT to the phase change material, a significant reduction in programming power is achieved compared to metal contact at the same via size. The temperature simulation result shows that the CNT filled via helps to reduce the programming area. The fabricated PCM on CNT filled via is able to endure more than 10<sup>4</sup> SET/RESET cycles without observable degradation.
topic Ge₂Sb₂Te₅ (GST)
phase change memory (PCM)
carbon nanotube (CNT)
url https://ieeexplore.ieee.org/document/8000557/
work_keys_str_mv AT panniwang lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
AT yihanchen lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
AT suwenli lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
AT salahuddinraju lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
AT longyanwang lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
AT liningzhang lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
AT xinnanlin lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
AT zhitangsong lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
AT mansunchan lowpowerphasechangememorywithverticalcarbonnanotubeelectrode
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