Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

The Schottky barrier heights of both n and p doped Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes were measured using ballistic electron emission microscopy and ballistic hole emission microscopy (BHEM), respectively. Measurements using both forward and reverse ballistic electron emission microscopy...

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Bibliographic Details
Main Authors:	Robert Balsano, Akitomo Matsubayashi, Vincent P. LaBella
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2013-11-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4831756

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