Field-Assisted and Thermionic Contributions to Conductance in SnO𝟐 Thick-Films

A deep analysis of conductance in nanostructured SnO2 thick films has been performed. A model for field-assisted thermionic barrier crossing is being proposed to explain the film conductivity. The model has been applied to explain the behavior of resistance in vacuum of two sets of nanostructured th...

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Bibliographic Details
Main Authors: C. Malagù, M. C. Carotta, G. Martinelli, M. A. Ponce, M. S. Castro, C. M. Aldao
Format: Article
Language:English
Published: Hindawi Limited 2009-01-01
Series:Journal of Sensors
Online Access:http://dx.doi.org/10.1155/2009/402527
Description
Summary:A deep analysis of conductance in nanostructured SnO2 thick films has been performed. A model for field-assisted thermionic barrier crossing is being proposed to explain the film conductivity. The model has been applied to explain the behavior of resistance in vacuum of two sets of nanostructured thick-films with grains having two well-distinct characteristic radii (𝑅=25 nm and 𝑅=125 nm). In the first case the grain radius is shorter than the depletion region width, a limit at which overlapping of barriers takes place, and in the second case it is longer. The behavior of resistance in the presence of dry air has been explained through the mechanism of barrier modulation through gas chemisorption.
ISSN:1687-725X
1687-7268