Low Temperature Growth of the Nanotextured Island and Solid 3C-SiC Layers on Si from Hydric Si, Ge and C Compounds

• Main Authors: Lev K. Orlov, Vladimir I. Vdovin, Natalia L. Ivina, Eduard A. Steinman, Yurii N. Drozdov, Michail L. Orlov
• Format: Article
• Language: English
• Published: MDPI AG 2020-06-01
• Series: Crystals
• Subjects: gas phase epitaxy; hydric compounds; 3C-SiC layers; growth stages; luminescence; quantization
• Online Access: https://www.mdpi.com/2073-4352/10/6/491

Different growth stages and surface morphology of the epitaxial 3C-SiC/Si(100) structures were studied. Heterocompositions were grown in vacuum from hydric compounds at a lower temperature. The composition, surface morphology and crystal structure of the 3C-SiC films were tested using X-ray diffraction, second ion mass spectrometry, scanning ion and electron microscopy, photo- and cathode luminescence. It was demonstrated that the fine crystal structure of the 3С-SiC islands was formed by the close-packed nanometer-size grains and precipitated on the underlying solid carbonized Si layer. Luminescence spectral lines of the solid carbonized Si layer, separated island and solid textured 3C-SiC layer were shifted toward the high ultraviolet range. The spectra measured by different methods were compared and the nature of the revealed lines was considered. This article discusses a quantum confinement effect observation in the 3C-SiC nanostructures and a perspective for the use of nanotextured island 3C-SiC layers as a two-dimensional surface quantum superlattice for high-frequency applications. The conductivity anisotropy and current-voltage characteristics of the two-dimensional superlattices with a non-additive electron dispersion law in the presence of a strong electric field were studied theoretically. Main efforts were focused on a search of the mechanisms allowing realization of the high-frequency negative dynamical conductivity for the structures having a positive static differential conductivity.