Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination
Thin film solar cells were fabricated using cuprous oxide (Cu2O) absorber layers grown by chemical vapor deposition (CVD) and gallium oxide (Ga2O3) buffer layers grown by atomic layer deposition (ALD) on the cuprous oxide CVD films. The in-situ formation of heterojunction in the same deposition syst...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5096283 |