Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination

Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination

Thin film solar cells were fabricated using cuprous oxide (Cu2O) absorber layers grown by chemical vapor deposition (CVD) and gallium oxide (Ga2O3) buffer layers grown by atomic layer deposition (ALD) on the cuprous oxide CVD films. The in-situ formation of heterojunction in the same deposition syst...

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Main Authors: Danny Chua, Sang Bok Kim, Roy Gordon
Format: Article
Language:English
Published: AIP Publishing LLC 2019-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5096283
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spelling doaj-3e5350098a714e598ed104462313e5e02020-11-24T20:57:57ZengAIP Publishing LLCAIP Advances2158-32262019-05-0195055203055203-610.1063/1.5096283120904ADVEnhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombinationDanny Chua0Sang Bok Kim1Roy Gordon2Harvard University, Cambridge, Massachusetts 02138, USAHarvard University, Cambridge, Massachusetts 02138, USAHarvard University, Cambridge, Massachusetts 02138, USAThin film solar cells were fabricated using cuprous oxide (Cu2O) absorber layers grown by chemical vapor deposition (CVD) and gallium oxide (Ga2O3) buffer layers grown by atomic layer deposition (ALD) on the cuprous oxide CVD films. The in-situ formation of heterojunction in the same deposition system without exposure to oxygen-rich ambient was found to be effective in mitigating the creation of detrimental cupric oxide (CuO) at the interface, resulting in a pristine photovoltaic junction capable of delivering an enhanced open-circuit voltage of 1.78 V. Numerical device simulations of a novel two-layer absorber architecture (CVD-Cu2O on ECD-Cu2O) showed promising possibilities (theoretical 13.2 % efficiency) for a solar cell combining in-situ junction formation with electrochemical deposition of the absorber layer.http://dx.doi.org/10.1063/1.5096283
collection DOAJ
language English
format Article
sources DOAJ
author Danny Chua
Sang Bok Kim
Roy Gordon
spellingShingle Danny Chua
Sang Bok Kim
Roy Gordon
Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination
AIP Advances
author_facet Danny Chua
Sang Bok Kim
Roy Gordon
author_sort Danny Chua
title Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination
title_short Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination
title_full Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination
title_fullStr Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination
title_full_unstemmed Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination
title_sort enhancement of the open circuit voltage of cu2o/ga2o3 heterojunction solar cells through the mitigation of interfacial recombination
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-05-01
description Thin film solar cells were fabricated using cuprous oxide (Cu2O) absorber layers grown by chemical vapor deposition (CVD) and gallium oxide (Ga2O3) buffer layers grown by atomic layer deposition (ALD) on the cuprous oxide CVD films. The in-situ formation of heterojunction in the same deposition system without exposure to oxygen-rich ambient was found to be effective in mitigating the creation of detrimental cupric oxide (CuO) at the interface, resulting in a pristine photovoltaic junction capable of delivering an enhanced open-circuit voltage of 1.78 V. Numerical device simulations of a novel two-layer absorber architecture (CVD-Cu2O on ECD-Cu2O) showed promising possibilities (theoretical 13.2 % efficiency) for a solar cell combining in-situ junction formation with electrochemical deposition of the absorber layer.
url http://dx.doi.org/10.1063/1.5096283
work_keys_str_mv AT dannychua enhancementoftheopencircuitvoltageofcu2oga2o3heterojunctionsolarcellsthroughthemitigationofinterfacialrecombination
AT sangbokkim enhancementoftheopencircuitvoltageofcu2oga2o3heterojunctionsolarcellsthroughthemitigationofinterfacialrecombination
AT roygordon enhancementoftheopencircuitvoltageofcu2oga2o3heterojunctionsolarcellsthroughthemitigationofinterfacialrecombination
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