The role of defects in the electrical properties of NbO2 thin film vertical devices

The role of defects in the electrical properties of NbO2 thin film vertical devices

Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film...

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Main Authors: Toyanath Joshi, Pavel Borisov, David Lederman
Format: Article
Language:English
Published: AIP Publishing LLC 2016-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4971818
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spelling doaj-3ddcea6331bf41c1b77fa968a6c73f172020-11-24T22:47:18ZengAIP Publishing LLCAIP Advances2158-32262016-12-01612125006125006-610.1063/1.4971818009612ADVThe role of defects in the electrical properties of NbO2 thin film vertical devicesToyanath Joshi0Pavel Borisov1David Lederman2Department of Physics, West Virginia University, Morgantown, West Virginia 26506, USADepartment of Physics, West Virginia University, Morgantown, West Virginia 26506, USADepartment of Physics, West Virginia University, Morgantown, West Virginia 26506, USAEpitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film grown on TiN-coated SiO2/Si substrate. Crystal quality of the as grown films was determined from x-ray diffractometry, x-ray photoelectron spectroscopy and atomic force microscopy data. The epitaxial film device was found to be more stable than the defect-rich polycrystalline sample in terms of current switching and oscillation behaviors.http://dx.doi.org/10.1063/1.4971818
collection DOAJ
language English
format Article
sources DOAJ
author Toyanath Joshi
Pavel Borisov
David Lederman
spellingShingle Toyanath Joshi
Pavel Borisov
David Lederman
The role of defects in the electrical properties of NbO2 thin film vertical devices
AIP Advances
author_facet Toyanath Joshi
Pavel Borisov
David Lederman
author_sort Toyanath Joshi
title The role of defects in the electrical properties of NbO2 thin film vertical devices
title_short The role of defects in the electrical properties of NbO2 thin film vertical devices
title_full The role of defects in the electrical properties of NbO2 thin film vertical devices
title_fullStr The role of defects in the electrical properties of NbO2 thin film vertical devices
title_full_unstemmed The role of defects in the electrical properties of NbO2 thin film vertical devices
title_sort role of defects in the electrical properties of nbo2 thin film vertical devices
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-12-01
description Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film grown on TiN-coated SiO2/Si substrate. Crystal quality of the as grown films was determined from x-ray diffractometry, x-ray photoelectron spectroscopy and atomic force microscopy data. The epitaxial film device was found to be more stable than the defect-rich polycrystalline sample in terms of current switching and oscillation behaviors.
url http://dx.doi.org/10.1063/1.4971818
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