The role of defects in the electrical properties of NbO2 thin film vertical devices
Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4971818 |
| Summary: | Epitaxial NbO2 thin films were grown on Si:GaN layers deposited on Al2O3 substrates using pulsed laser deposition. Pulsed current-voltage (IV) curves and self-sustained current oscillations were measured across a 31 nm NbO2 film and compared with a similar device made from polycrystalline NbO2 film grown on TiN-coated SiO2/Si substrate. Crystal quality of the as grown films was determined from x-ray diffractometry, x-ray photoelectron spectroscopy and atomic force microscopy data. The epitaxial film device was found to be more stable than the defect-rich polycrystalline sample in terms of current switching and oscillation behaviors. |
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| ISSN: | 2158-3226 |