Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System
Abstract Novel glasses in a Ga2S3-Sb2S3-AgI system were prepared with a melt-quenching method, and their glass-forming region was identified. The maximum dissolvable AgI in glasses was 65 mol%. The thermal, optical, and structural properties of glasses were investigated as a function of AgI and Ga2S...
Main Authors: | , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2018-01-01
|
Series: | Scientific Reports |
Online Access: | https://doi.org/10.1038/s41598-018-20144-3 |
id |
doaj-3dad931b2ee34b9e83a5064a8fa4f332 |
---|---|
record_format |
Article |
spelling |
doaj-3dad931b2ee34b9e83a5064a8fa4f3322020-12-08T03:42:49ZengNature Publishing GroupScientific Reports2045-23222018-01-01811710.1038/s41598-018-20144-3Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide SystemXinyu Huang0Qing Jiao1Changgui Lin2Hongli Ma3Xianghua Zhang4Erwei Zhu5Xueyun Liu6Shixun Dai7Tiefeng Xu8Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo UniversityKey Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo UniversityKey Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo UniversityLaboratory of Glasses and Ceramics, Institute of Chemical Science UMR CNRS 6226, University of Rennes 1Laboratory of Glasses and Ceramics, Institute of Chemical Science UMR CNRS 6226, University of Rennes 1Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo UniversityKey Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo UniversityKey Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo UniversityKey Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo UniversityAbstract Novel glasses in a Ga2S3-Sb2S3-AgI system were prepared with a melt-quenching method, and their glass-forming region was identified. The maximum dissolvable AgI in glasses was 65 mol%. The thermal, optical, and structural properties of glasses were investigated as a function of AgI and Ga2S3 contents. The Ga2S3-Sb2S3-AgI glasses possess a wide region of transmission window (0.65−14 μm). An ionic conductivity of approximately 1.01 × 10−3 S/cm can be obtained for a 40 (0.8Sb2S3-0.2Ga2S3)-60AgI glass at an ambient temperature, and the ionic conductivity increased as temperature increased. The relative activation energy of Ag+ conduction was also calculated. These novel glasses show potential for the combined application of infrared optics and solid electrolytes.https://doi.org/10.1038/s41598-018-20144-3 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Xinyu Huang Qing Jiao Changgui Lin Hongli Ma Xianghua Zhang Erwei Zhu Xueyun Liu Shixun Dai Tiefeng Xu |
spellingShingle |
Xinyu Huang Qing Jiao Changgui Lin Hongli Ma Xianghua Zhang Erwei Zhu Xueyun Liu Shixun Dai Tiefeng Xu Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System Scientific Reports |
author_facet |
Xinyu Huang Qing Jiao Changgui Lin Hongli Ma Xianghua Zhang Erwei Zhu Xueyun Liu Shixun Dai Tiefeng Xu |
author_sort |
Xinyu Huang |
title |
Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System |
title_short |
Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System |
title_full |
Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System |
title_fullStr |
Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System |
title_full_unstemmed |
Formation, Microstructure, and Conductivity of a Novel Ga2S3-Sb2S3-AgI Chalcogenide System |
title_sort |
formation, microstructure, and conductivity of a novel ga2s3-sb2s3-agi chalcogenide system |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2018-01-01 |
description |
Abstract Novel glasses in a Ga2S3-Sb2S3-AgI system were prepared with a melt-quenching method, and their glass-forming region was identified. The maximum dissolvable AgI in glasses was 65 mol%. The thermal, optical, and structural properties of glasses were investigated as a function of AgI and Ga2S3 contents. The Ga2S3-Sb2S3-AgI glasses possess a wide region of transmission window (0.65−14 μm). An ionic conductivity of approximately 1.01 × 10−3 S/cm can be obtained for a 40 (0.8Sb2S3-0.2Ga2S3)-60AgI glass at an ambient temperature, and the ionic conductivity increased as temperature increased. The relative activation energy of Ag+ conduction was also calculated. These novel glasses show potential for the combined application of infrared optics and solid electrolytes. |
url |
https://doi.org/10.1038/s41598-018-20144-3 |
work_keys_str_mv |
AT xinyuhuang formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem AT qingjiao formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem AT changguilin formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem AT honglima formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem AT xianghuazhang formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem AT erweizhu formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem AT xueyunliu formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem AT shixundai formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem AT tiefengxu formationmicrostructureandconductivityofanovelga2s3sb2s3agichalcogenidesystem |
_version_ |
1724392351073304576 |