RADIATION RESISTANCE OF SILICON NANOSTRUCTURED PHOTOVOLTAIC ELEMENTS FORMED IN COMPRESSION PLASMA

RADIATION RESISTANCE OF SILICON NANOSTRUCTURED PHOTOVOLTAIC ELEMENTS FORMED IN COMPRESSION PLASMA

Photovoltaic effect in silicon doped by the action of compression plasma pulses is investigated for the first time. Plasma treatment parameters providing maximum values of photo-emf are optimized. Dependences of photo-emf on the dose of electron high-energy post-irradiation are studied.

Bibliographic Details
Main Authors:	V. V. Uglov, N. T. Kvasov, V. M. Astashynski, Yu. A. Petukhou, A. M. Kuzmitski, I. L. Doroshevich, S. B. Lastovski
Format:	Article
Language:	Russian
Published:	Educational institution «Belarusian State University of Informatics and Radioelectronics» 2019-06-01
Series:	Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki
Subjects:	фотовольтаический эффект кремний радиационные дефекты компрессионная плазма
Online Access:	https://doklady.bsuir.by/jour/article/view/152

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