Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes

Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes

TiO2/LaAlO3 (TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/...

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Main Authors: Yuyuan Cao, Qitao Di, Lin Zhu, Aidong Li, Di Wu
Format: Article
Language:English
Published: Hindawi Limited 2015-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2015/470107
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spelling doaj-3d29389924fa4ac58ce5ec3101c1de232020-11-24T21:54:49ZengHindawi LimitedAdvances in Materials Science and Engineering1687-84341687-84422015-01-01201510.1155/2015/470107470107Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt ElectrodesYuyuan Cao0Qitao Di1Lin Zhu2Aidong Li3Di Wu4National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaNational Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, ChinaTiO2/LaAlO3 (TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer.http://dx.doi.org/10.1155/2015/470107
collection DOAJ
language English
format Article
sources DOAJ
author Yuyuan Cao
Qitao Di
Lin Zhu
Aidong Li
Di Wu
spellingShingle Yuyuan Cao
Qitao Di
Lin Zhu
Aidong Li
Di Wu
Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes
Advances in Materials Science and Engineering
author_facet Yuyuan Cao
Qitao Di
Lin Zhu
Aidong Li
Di Wu
author_sort Yuyuan Cao
title Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes
title_short Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes
title_full Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes
title_fullStr Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes
title_full_unstemmed Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes
title_sort resistive switching characteristics in tio2/laalo3 heterostructures sandwiched in pt electrodes
publisher Hindawi Limited
series Advances in Materials Science and Engineering
issn 1687-8434
1687-8442
publishDate 2015-01-01
description TiO2/LaAlO3 (TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer.
url http://dx.doi.org/10.1155/2015/470107
work_keys_str_mv AT yuyuancao resistiveswitchingcharacteristicsintio2laalo3heterostructuressandwichedinptelectrodes
AT qitaodi resistiveswitchingcharacteristicsintio2laalo3heterostructuressandwichedinptelectrodes
AT linzhu resistiveswitchingcharacteristicsintio2laalo3heterostructuressandwichedinptelectrodes
AT aidongli resistiveswitchingcharacteristicsintio2laalo3heterostructuressandwichedinptelectrodes
AT diwu resistiveswitchingcharacteristicsintio2laalo3heterostructuressandwichedinptelectrodes
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