Resistive Switching Characteristics in TiO2/LaAlO3 Heterostructures Sandwiched in Pt Electrodes
TiO2/LaAlO3 (TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/470107 |
| Summary: | TiO2/LaAlO3 (TiO2/LAO) heterostructures have been deposited on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. Resistive switching characteristics of Pt/TiO2/LAO/Pt have been studied and discussed in comparison with those of Pt/TiO2/Pt. It is observed that the switching uniformity and the ON/OFF resistance ratio can be greatly improved by introducing the LAO layer. The observed resistive switching characteristics are discussed as a function of LAO thickness and explained by the preferential formation and rupture of conductive filaments, composed of oxygen vacancies, in the LAO layer. |
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| ISSN: | 1687-8434 1687-8442 |