Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ES...

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Bibliographic Details
Main Authors: You Wang, Yu Mao, Qizheng Ji, Ming Yang, Zhaonian Yang, Hai Lin
Format: Article
Language:English
Published: MDPI AG 2021-02-01
Series:Electronics
Subjects:
band-to-band tunneling (BTBT)
electrostatic discharge (ESD)
SiGe Source/Drain PNN TFET
technology computer aided design (TCAD)
Online Access:https://www.mdpi.com/2079-9292/10/4/454

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https://www.mdpi.com/2079-9292/10/4/454

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