High Electron Mobility Ge<sub>1&#x2212;x</sub>Sn<sub>x</sub>(x &#x003E; 10&#x0025;) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer

The microwave wireless power transfer is a power transmission device that breaks through the limitation of the transmission line, and is helpful for handling equipment power supply problems in complex scenes. Thus, it has a wide array of applications. This paper focuses on the research and design of...

Full description

Bibliographic Details
Main Authors: Xiao Zhai, Jianjun Song, Hangyu Chen, Xianying Dai, Tianlong Zhao
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8811473/
id doaj-3ca6e32305f04707997debb52a801cec
record_format Article
spelling doaj-3ca6e32305f04707997debb52a801cec2021-03-29T23:42:22ZengIEEEIEEE Access2169-35362019-01-01712743812745210.1109/ACCESS.2019.29371678811473High Electron Mobility Ge<sub>1&#x2212;x</sub>Sn<sub>x</sub>(x &#x003E; 10&#x0025;) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power TransferXiao Zhai0https://orcid.org/0000-0003-3350-0346Jianjun Song1Hangyu Chen2Xianying Dai3Tianlong Zhao4Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi&#x2019;an, ChinaKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi&#x2019;an, ChinaKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi&#x2019;an, ChinaKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi&#x2019;an, ChinaKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi&#x2019;an, ChinaThe microwave wireless power transfer is a power transmission device that breaks through the limitation of the transmission line, and is helpful for handling equipment power supply problems in complex scenes. Thus, it has a wide array of applications. This paper focuses on the research and design of the core components of the receiving part of the microwave wireless power transfer, it optimizes the material physical parameters and geometrical parameters of the device to improve the energy conversion efficiency. First, we using the ADS simulation tool, the relationship between the electrical parameters of the schottky diode and the energy conversion efficiency is obtained by adjusting the SPICE parameters of the schottky diode. The optimal design principle is proposed, which lays a theoretical foundation for the optimization design of the subsequent high energy conversion efficiency rectifier device. Second, basing on the diode rectification principle and the theoretical basis obtained in the first part, a GeSn folded space charge on the insulating layer is proposed. Using the device simulation tool Silvaco to adjust the physical parameters of the device material and the geometrical parameters, the device structure of the GeSnOI folded space charge region Schottky diode is obtained. The results show that compared with the traditional structure Ge schottky diode, the folded space charge region schottky diode optimized in this paper has the advantage of significantly improving its energy conversion efficiency, and the energy conversion efficiency is improved by 8.1%.https://ieeexplore.ieee.org/document/8811473/Microwave wireless power transfer (MWPT)GeSnOIschottky diodeenergy conversion efficiencyfolded space charge region
collection DOAJ
language English
format Article
sources DOAJ
author Xiao Zhai
Jianjun Song
Hangyu Chen
Xianying Dai
Tianlong Zhao
spellingShingle Xiao Zhai
Jianjun Song
Hangyu Chen
Xianying Dai
Tianlong Zhao
High Electron Mobility Ge<sub>1&#x2212;x</sub>Sn<sub>x</sub>(x &#x003E; 10&#x0025;) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer
IEEE Access
Microwave wireless power transfer (MWPT)
GeSnOI
schottky diode
energy conversion efficiency
folded space charge region
author_facet Xiao Zhai
Jianjun Song
Hangyu Chen
Xianying Dai
Tianlong Zhao
author_sort Xiao Zhai
title High Electron Mobility Ge<sub>1&#x2212;x</sub>Sn<sub>x</sub>(x &#x003E; 10&#x0025;) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer
title_short High Electron Mobility Ge<sub>1&#x2212;x</sub>Sn<sub>x</sub>(x &#x003E; 10&#x0025;) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer
title_full High Electron Mobility Ge<sub>1&#x2212;x</sub>Sn<sub>x</sub>(x &#x003E; 10&#x0025;) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer
title_fullStr High Electron Mobility Ge<sub>1&#x2212;x</sub>Sn<sub>x</sub>(x &#x003E; 10&#x0025;) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer
title_full_unstemmed High Electron Mobility Ge<sub>1&#x2212;x</sub>Sn<sub>x</sub>(x &#x003E; 10&#x0025;) Folding Space Charge Zone Schottky Diode for Microwave Wireless Power Transfer
title_sort high electron mobility ge<sub>1&#x2212;x</sub>sn<sub>x</sub>(x &#x003e; 10&#x0025;) folding space charge zone schottky diode for microwave wireless power transfer
publisher IEEE
series IEEE Access
issn 2169-3536
publishDate 2019-01-01
description The microwave wireless power transfer is a power transmission device that breaks through the limitation of the transmission line, and is helpful for handling equipment power supply problems in complex scenes. Thus, it has a wide array of applications. This paper focuses on the research and design of the core components of the receiving part of the microwave wireless power transfer, it optimizes the material physical parameters and geometrical parameters of the device to improve the energy conversion efficiency. First, we using the ADS simulation tool, the relationship between the electrical parameters of the schottky diode and the energy conversion efficiency is obtained by adjusting the SPICE parameters of the schottky diode. The optimal design principle is proposed, which lays a theoretical foundation for the optimization design of the subsequent high energy conversion efficiency rectifier device. Second, basing on the diode rectification principle and the theoretical basis obtained in the first part, a GeSn folded space charge on the insulating layer is proposed. Using the device simulation tool Silvaco to adjust the physical parameters of the device material and the geometrical parameters, the device structure of the GeSnOI folded space charge region Schottky diode is obtained. The results show that compared with the traditional structure Ge schottky diode, the folded space charge region schottky diode optimized in this paper has the advantage of significantly improving its energy conversion efficiency, and the energy conversion efficiency is improved by 8.1%.
topic Microwave wireless power transfer (MWPT)
GeSnOI
schottky diode
energy conversion efficiency
folded space charge region
url https://ieeexplore.ieee.org/document/8811473/
work_keys_str_mv AT xiaozhai highelectronmobilitygesub1x2212xsubsnsubxsubxx003e10x0025foldingspacechargezoneschottkydiodeformicrowavewirelesspowertransfer
AT jianjunsong highelectronmobilitygesub1x2212xsubsnsubxsubxx003e10x0025foldingspacechargezoneschottkydiodeformicrowavewirelesspowertransfer
AT hangyuchen highelectronmobilitygesub1x2212xsubsnsubxsubxx003e10x0025foldingspacechargezoneschottkydiodeformicrowavewirelesspowertransfer
AT xianyingdai highelectronmobilitygesub1x2212xsubsnsubxsubxx003e10x0025foldingspacechargezoneschottkydiodeformicrowavewirelesspowertransfer
AT tianlongzhao highelectronmobilitygesub1x2212xsubsnsubxsubxx003e10x0025foldingspacechargezoneschottkydiodeformicrowavewirelesspowertransfer
_version_ 1724189069799325696