PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD

The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of...

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Main Authors: Alexander A. Danilenko, Anton V. Strygin, Nikolay I. Mikhailov, Vadim V. Perepelovsky, Yaroslav N. Panichev, Vladislav V. Marochkin, Vladimir L. Ivanov
Format: Article
Language:Russian
Published: Saint Petersburg Electrotechnical University "LETI" 2018-10-01
Series:Известия высших учебных заведений России: Радиоэлектроника
Subjects:
Online Access:https://re.eltech.ru/jour/article/view/260
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spelling doaj-3ca092dadb344c1a9661934ccf6cbe962021-07-28T13:21:16ZrusSaint Petersburg Electrotechnical University "LETI"Известия высших учебных заведений России: Радиоэлектроника1993-89852658-47942018-10-0105515910.32603/1993-8985-2018-21-5-51-59249PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCADAlexander A. Danilenko0Anton V. Strygin1Nikolay I. Mikhailov2Vadim V. Perepelovsky3Yaroslav N. Panichev4Vladislav V. Marochkin5Vladimir L. Ivanov6Saint Petersburg Electrotechnical University "LETI"Saint Petersburg Electrotechnical University "LETI"Saint Petersburg Electrotechnical University "LETI"Saint Petersburg Electrotechnical University "LETI"JSC "Morion"Pixpolar OyITMO UniversityThe article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of the floating gates. It is shown that the charge generated on the floating gate changes characteristics of the i-region of the pin diode.The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model. Simulation is performed in Synopsys Sentaurus TCAD. Physical models describing traps and their parameters, particle tunneling, transport phenomena in dielectrics and amorphous films are used in simulation. As a result of modeling, the opening time dependences on size, floating gate location and floating gate charge magnitude are obtained.It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the single-gate ones. To program a large range of pin-diode opening times, it is 2 gate structure that is advisable to use. The obtained results indicate that it is possible to implement a two-bit programming pin-diode and expand its functionality.https://re.eltech.ru/jour/article/view/260pin-diodeprogrammable pin-diodesynopsys sentaurus tcadfloating gate
collection DOAJ
language Russian
format Article
sources DOAJ
author Alexander A. Danilenko
Anton V. Strygin
Nikolay I. Mikhailov
Vadim V. Perepelovsky
Yaroslav N. Panichev
Vladislav V. Marochkin
Vladimir L. Ivanov
spellingShingle Alexander A. Danilenko
Anton V. Strygin
Nikolay I. Mikhailov
Vadim V. Perepelovsky
Yaroslav N. Panichev
Vladislav V. Marochkin
Vladimir L. Ivanov
PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD
Известия высших учебных заведений России: Радиоэлектроника
pin-diode
programmable pin-diode
synopsys sentaurus tcad
floating gate
author_facet Alexander A. Danilenko
Anton V. Strygin
Nikolay I. Mikhailov
Vadim V. Perepelovsky
Yaroslav N. Panichev
Vladislav V. Marochkin
Vladimir L. Ivanov
author_sort Alexander A. Danilenko
title PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD
title_short PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD
title_full PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD
title_fullStr PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD
title_full_unstemmed PROGRAMMING 2-BIT PIN DIODE IN SYNOPSYS TCAD
title_sort programming 2-bit pin diode in synopsys tcad
publisher Saint Petersburg Electrotechnical University "LETI"
series Известия высших учебных заведений России: Радиоэлектроника
issn 1993-8985
2658-4794
publishDate 2018-10-01
description The article is devoted to the modeling of a two-bit pin-diode. The possibility of programming opening time of the device based on the pin-diode is shown. The design consisting of a pin diode and two floating gates on the surface of i-region is considered. The addition of electrodes to the surface of the i-region makes it possible to regulate the concentration of electrons and holes within the larger limits in compare with the single-gate structure creating enriched and depleted are-as in the structure. Programming is carried out by applying the appropriate voltage to the control electrodes of the floating gates. It is shown that the charge generated on the floating gate changes characteristics of the i-region of the pin diode.The key elements of complex simulation of the two-gate pin diode are simulation of charge accumulation mechanism on the floating gate, simulation of pin-diode opening time and calibration of numerical model. Simulation is performed in Synopsys Sentaurus TCAD. Physical models describing traps and their parameters, particle tunneling, transport phenomena in dielectrics and amorphous films are used in simulation. As a result of modeling, the opening time dependences on size, floating gate location and floating gate charge magnitude are obtained.It is shown that the pin-diode 2-gate structures allow to change the opening time in a wider range than the single-gate ones. To program a large range of pin-diode opening times, it is 2 gate structure that is advisable to use. The obtained results indicate that it is possible to implement a two-bit programming pin-diode and expand its functionality.
topic pin-diode
programmable pin-diode
synopsys sentaurus tcad
floating gate
url https://re.eltech.ru/jour/article/view/260
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