The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2

We have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where relative angles between two different grains are 0 and 60 degree. The grain boundaries with specific relative angle have been formed with chemical vapor deposition (CVD) growth on graphite and hexagonal...

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Main Authors:	Terunobu Nakanishi, Shoji Yoshida, Kota Murase, Osamu Takeuchi, Takashi Taniguchi, Kenji Watanabe, Hidemi Shigekawa, Yu Kobayashi, Yasumitsu Miyata, Hisanori Shinohara, Ryo Kitaura
Format:	Article
Language:	English
Published:	Frontiers Media S.A. 2019-04-01
Series:	Frontiers in Physics
Subjects:	grain boundaries transition metal dichalchogenides scanning tunneling microscopy boundary states chemical vapor deposition (CVD)
Online Access:	https://www.frontiersin.org/article/10.3389/fphy.2019.00059/full

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spelling	doaj-3c8f79bd0ed94d72aced9d310d776a3c2020-11-24T21:32:42ZengFrontiers Media S.A.Frontiers in Physics2296-424X2019-04-01710.3389/fphy.2019.00059450268The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2Terunobu Nakanishi0Shoji Yoshida1Kota Murase2Osamu Takeuchi3Takashi Taniguchi4Kenji Watanabe5Hidemi Shigekawa6Yu Kobayashi7Yasumitsu Miyata8Hisanori Shinohara9Ryo Kitaura10Department of Chemistry, Nagoya University, Nagoya, JapanResearch Center for Functional Materials, National Institute for Materials Science, Tsukuba, JapanResearch Center for Functional Materials, National Institute for Materials Science, Tsukuba, JapanResearch Center for Functional Materials, National Institute for Materials Science, Tsukuba, JapanFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, JapanFaculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, JapanResearch Center for Functional Materials, National Institute for Materials Science, Tsukuba, JapanDepartment of Physics, Tokyo Metropolitan University, Hachioji, JapanDepartment of Physics, Tokyo Metropolitan University, Hachioji, JapanDepartment of Chemistry, Nagoya University, Nagoya, JapanDepartment of Chemistry, Nagoya University, Nagoya, JapanWe have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where relative angles between two different grains are 0 and 60 degree. The grain boundaries with specific relative angle have been formed with chemical vapor deposition (CVD) growth on graphite and hexagonal boron nitride flakes; van der Waals interlayer interaction between MoS2 and the flakes restricts the relative angle between two different grains of MoS2. Through scanning tunneling microscopy (STM) and spectroscopy measurements, we have found that the perfectly stitched structure between two different grains of MoS2 was realized in the case of the 0 degree grain boundary. We also found that even with the perfectly stitched structure, valence band maximum (VBM) and conduction band minimum (CBM) shows significant blue shift, which probably arise from lattice strain at the boundary.https://www.frontiersin.org/article/10.3389/fphy.2019.00059/fullgrain boundariestransition metal dichalchogenidesscanning tunneling microscopyboundary stateschemical vapor deposition (CVD)
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Terunobu Nakanishi Shoji Yoshida Kota Murase Osamu Takeuchi Takashi Taniguchi Kenji Watanabe Hidemi Shigekawa Yu Kobayashi Yasumitsu Miyata Hisanori Shinohara Ryo Kitaura
spellingShingle	Terunobu Nakanishi Shoji Yoshida Kota Murase Osamu Takeuchi Takashi Taniguchi Kenji Watanabe Hidemi Shigekawa Yu Kobayashi Yasumitsu Miyata Hisanori Shinohara Ryo Kitaura The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2 Frontiers in Physics grain boundaries transition metal dichalchogenides scanning tunneling microscopy boundary states chemical vapor deposition (CVD)
author_facet	Terunobu Nakanishi Shoji Yoshida Kota Murase Osamu Takeuchi Takashi Taniguchi Kenji Watanabe Hidemi Shigekawa Yu Kobayashi Yasumitsu Miyata Hisanori Shinohara Ryo Kitaura
author_sort	Terunobu Nakanishi
title	The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2
title_short	The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2
title_full	The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2
title_fullStr	The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2
title_full_unstemmed	The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2
title_sort	atomic and electronic structure of 0° and 60° grain boundaries in mos2
publisher	Frontiers Media S.A.
series	Frontiers in Physics
issn	2296-424X
publishDate	2019-04-01
description	We have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where relative angles between two different grains are 0 and 60 degree. The grain boundaries with specific relative angle have been formed with chemical vapor deposition (CVD) growth on graphite and hexagonal boron nitride flakes; van der Waals interlayer interaction between MoS2 and the flakes restricts the relative angle between two different grains of MoS2. Through scanning tunneling microscopy (STM) and spectroscopy measurements, we have found that the perfectly stitched structure between two different grains of MoS2 was realized in the case of the 0 degree grain boundary. We also found that even with the perfectly stitched structure, valence band maximum (VBM) and conduction band minimum (CBM) shows significant blue shift, which probably arise from lattice strain at the boundary.
topic	grain boundaries transition metal dichalchogenides scanning tunneling microscopy boundary states chemical vapor deposition (CVD)
url	https://www.frontiersin.org/article/10.3389/fphy.2019.00059/full
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The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2

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