Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics

Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics

This paper presents a comparison analysis of carrier statistics on numerical simulations of MOSFET and tunneling FET (TFET). While the MOSFET current characteristics are not sensitive to the carrier statistic utilized in the simulation, a detailed analysis is presented by inspections of the channel...

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Bibliographic Details
Main Authors: Dan Li, Baili Zhang, Haijun Lou, Lining Zhang, Xinnan Lin, Mansun Chan
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Online Access:https://ieeexplore.ieee.org/document/7230248/

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