Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics
This paper presents a comparison analysis of carrier statistics on numerical simulations of MOSFET and tunneling FET (TFET). While the MOSFET current characteristics are not sensitive to the carrier statistic utilized in the simulation, a detailed analysis is presented by inspections of the channel...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2015-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Online Access: | https://ieeexplore.ieee.org/document/7230248/ |