Comparative Analysis of Carrier Statistics on MOSFET and Tunneling FET Characteristics

• Main Authors: Dan Li, Baili Zhang, Haijun Lou, Lining Zhang, Xinnan Lin, Mansun Chan
• Format: Article
• Language: English
• Published: IEEE 2015-01-01
• Series: IEEE Journal of the Electron Devices Society
• Online Access: https://ieeexplore.ieee.org/document/7230248/

This paper presents a comparison analysis of carrier statistics on numerical simulations of MOSFET and tunneling FET (TFET). While the MOSFET current characteristics are not sensitive to the carrier statistic utilized in the simulation, a detailed analysis is presented by inspections of the channel charge density and electric field profile. On the other hand, numerical simulations of TFETs with the Fermi-Dirac (F-D) statistics give larger current even in the sub-threshold region. It is attributed to the larger electric field across the tunnel junction between degenerated channel and heavily doped source which governs the interband tunneling process. As a result, F-D statistics should be utilized when modeling the tunneling current in TFETs.