Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover,...

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Bibliographic Details
Main Authors: Dirk König, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean Smith, Joachim Knoch
Format: Article
Language:English
Published: Beilstein-Institut 2018-08-01
Series:Beilstein Journal of Nanotechnology
Subjects:
energy offset
impurity doping alternative
ultrasmall nanoscale silicon crystals
wires and devices
Online Access:https://doi.org/10.3762/bjnano.9.210

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