Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating

Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover,...

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Main Authors: Dirk König, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean Smith, Joachim Knoch
Format: Article
Language:English
Published: Beilstein-Institut 2018-08-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.9.210
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spelling doaj-3bd003cc63f146c3a3bfcbbacadb12762020-11-24T20:46:35ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-08-01912255226410.3762/bjnano.9.2102190-4286-9-210Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coatingDirk König0Daniel Hiller1Noël Wilck2Birger Berghoff3Merlin Müller4Sangeeta Thakur5Giovanni Di Santo6Luca Petaccia7Joachim Mayer8Sean Smith9Joachim Knoch10Integrated Materials Design Centre, University of New South Wales, NSW 2052, AustraliaLaboratory of Nanotechnology, Dept. of Microsystems Engineering (IMTEK), University of Freiburg, 79110, GermanyInstitute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074, GermanyInstitute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074, GermanyErnst-Ruska Centre for Microscopy and Spectroscopy with Electrons, RWTH Aachen University, 52074, GermanyElettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, ItalyElettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, ItalyElettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, ItalyErnst-Ruska Centre for Microscopy and Spectroscopy with Electrons, RWTH Aachen University, 52074, GermanyIntegrated Materials Design Centre, University of New South Wales, NSW 2052, AustraliaInstitute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074, GermanyImpurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.https://doi.org/10.3762/bjnano.9.210energy offsetimpurity doping alternativeultrasmall nanoscale silicon crystalswires and devices
collection DOAJ
language English
format Article
sources DOAJ
author Dirk König
Daniel Hiller
Noël Wilck
Birger Berghoff
Merlin Müller
Sangeeta Thakur
Giovanni Di Santo
Luca Petaccia
Joachim Mayer
Sean Smith
Joachim Knoch
spellingShingle Dirk König
Daniel Hiller
Noël Wilck
Birger Berghoff
Merlin Müller
Sangeeta Thakur
Giovanni Di Santo
Luca Petaccia
Joachim Mayer
Sean Smith
Joachim Knoch
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
Beilstein Journal of Nanotechnology
energy offset
impurity doping alternative
ultrasmall nanoscale silicon crystals
wires and devices
author_facet Dirk König
Daniel Hiller
Noël Wilck
Birger Berghoff
Merlin Müller
Sangeeta Thakur
Giovanni Di Santo
Luca Petaccia
Joachim Mayer
Sean Smith
Joachim Knoch
author_sort Dirk König
title Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
title_short Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
title_full Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
title_fullStr Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
title_full_unstemmed Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
title_sort intrinsic ultrasmall nanoscale silicon turns n-/p-type with sio2/si3n4-coating
publisher Beilstein-Institut
series Beilstein Journal of Nanotechnology
issn 2190-4286
publishDate 2018-08-01
description Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.
topic energy offset
impurity doping alternative
ultrasmall nanoscale silicon crystals
wires and devices
url https://doi.org/10.3762/bjnano.9.210
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