Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating
Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover,...
Main Authors: | , , , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Beilstein-Institut
2018-08-01
|
Series: | Beilstein Journal of Nanotechnology |
Subjects: | |
Online Access: | https://doi.org/10.3762/bjnano.9.210 |
id |
doaj-3bd003cc63f146c3a3bfcbbacadb1276 |
---|---|
record_format |
Article |
spelling |
doaj-3bd003cc63f146c3a3bfcbbacadb12762020-11-24T20:46:35ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-08-01912255226410.3762/bjnano.9.2102190-4286-9-210Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coatingDirk König0Daniel Hiller1Noël Wilck2Birger Berghoff3Merlin Müller4Sangeeta Thakur5Giovanni Di Santo6Luca Petaccia7Joachim Mayer8Sean Smith9Joachim Knoch10Integrated Materials Design Centre, University of New South Wales, NSW 2052, AustraliaLaboratory of Nanotechnology, Dept. of Microsystems Engineering (IMTEK), University of Freiburg, 79110, GermanyInstitute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074, GermanyInstitute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074, GermanyErnst-Ruska Centre for Microscopy and Spectroscopy with Electrons, RWTH Aachen University, 52074, GermanyElettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, ItalyElettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, ItalyElettra Sincrotrone Trieste, Strada Statale 14 km 163.5, 34149 Trieste, ItalyErnst-Ruska Centre for Microscopy and Spectroscopy with Electrons, RWTH Aachen University, 52074, GermanyIntegrated Materials Design Centre, University of New South Wales, NSW 2052, AustraliaInstitute of Semiconductor Electronics (IHT), RWTH Aachen University, 52074, GermanyImpurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si.https://doi.org/10.3762/bjnano.9.210energy offsetimpurity doping alternativeultrasmall nanoscale silicon crystalswires and devices |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Dirk König Daniel Hiller Noël Wilck Birger Berghoff Merlin Müller Sangeeta Thakur Giovanni Di Santo Luca Petaccia Joachim Mayer Sean Smith Joachim Knoch |
spellingShingle |
Dirk König Daniel Hiller Noël Wilck Birger Berghoff Merlin Müller Sangeeta Thakur Giovanni Di Santo Luca Petaccia Joachim Mayer Sean Smith Joachim Knoch Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating Beilstein Journal of Nanotechnology energy offset impurity doping alternative ultrasmall nanoscale silicon crystals wires and devices |
author_facet |
Dirk König Daniel Hiller Noël Wilck Birger Berghoff Merlin Müller Sangeeta Thakur Giovanni Di Santo Luca Petaccia Joachim Mayer Sean Smith Joachim Knoch |
author_sort |
Dirk König |
title |
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating |
title_short |
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating |
title_full |
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating |
title_fullStr |
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating |
title_full_unstemmed |
Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating |
title_sort |
intrinsic ultrasmall nanoscale silicon turns n-/p-type with sio2/si3n4-coating |
publisher |
Beilstein-Institut |
series |
Beilstein Journal of Nanotechnology |
issn |
2190-4286 |
publishDate |
2018-08-01 |
description |
Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in Si-based field-effect transistors (FETs). Moreover, self-purification and massively increased ionization energy cause doping to fail for Si nano-crystals (NCs) showing quantum confinement. To introduce electron- (n-) or hole- (p-) type conductivity, usn-Si may not require doping, but an energy shift of electronic states with respect to the vacuum energy between different regions of usn-Si. We show in theory and experiment that usn-Si can experience a considerable energy offset of electronic states by embedding it in silicon dioxide (SiO2) or silicon nitride (Si3N4), whereby a few monolayers (MLs) of SiO2 or Si3N4 are enough to achieve these offsets. Our findings present an alternative to conventional impurity doping for ULSI, provide new opportunities for ultralow power electronics and open a whole new vista on the introduction of p- and n-type conductivity into usn-Si. |
topic |
energy offset impurity doping alternative ultrasmall nanoscale silicon crystals wires and devices |
url |
https://doi.org/10.3762/bjnano.9.210 |
work_keys_str_mv |
AT dirkkonig intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT danielhiller intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT noelwilck intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT birgerberghoff intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT merlinmuller intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT sangeetathakur intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT giovannidisanto intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT lucapetaccia intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT joachimmayer intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT seansmith intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating AT joachimknoch intrinsicultrasmallnanoscalesiliconturnsnptypewithsio2si3n4coating |
_version_ |
1716812249709936640 |