Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions

Hydrogen is identified as a useful technique to passivate defects within crystalline silicon. However, the effect of hydrogen passivation for a silicon surface is normally characterized as a reduction in surface recombination velocity (SRV), which is not enough to reflect the detailed changes of ele...

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Main Authors:	Lihui Song, Deren Yang, Xuegong Yu
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-10-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5122253

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record_format	Article
spelling	doaj-3b8e882f214a489eb6955d5e02fccd742020-11-25T02:09:29ZengAIP Publishing LLCAIP Advances2158-32262019-10-01910105102105102-610.1063/1.5122253014910ADVInvestigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditionsLihui Song0Deren Yang1Xuegong Yu2College of Materials & Environmental Engineering, Hangzhou Dianzi University, No. 1, 2nd Street, Jianggan District, Hangzhou 310018, People’s Republic of ChinaState Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, No.38 Zheda Road, Hangzhou 310027, People’s Republic of ChinaState Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, No.38 Zheda Road, Hangzhou 310027, People’s Republic of ChinaHydrogen is identified as a useful technique to passivate defects within crystalline silicon. However, the effect of hydrogen passivation for a silicon surface is normally characterized as a reduction in surface recombination velocity (SRV), which is not enough to reflect the detailed changes of electronic properties, such as defect density, defect energy levels, and capture cross section, of silicon surface states. In this paper, we utilized the transient capacitance measurement to characterize the detailed electronic properties of silicon surface states before and after hydrogenation. The differences, in terms of the effects of hydrogenation on silicon surface states, either in copper contaminated conditions or clean conditions, are presented and discussed.http://dx.doi.org/10.1063/1.5122253
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Lihui Song Deren Yang Xuegong Yu
spellingShingle	Lihui Song Deren Yang Xuegong Yu Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions AIP Advances
author_facet	Lihui Song Deren Yang Xuegong Yu
author_sort	Lihui Song
title	Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions
title_short	Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions
title_full	Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions
title_fullStr	Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions
title_full_unstemmed	Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions
title_sort	investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2019-10-01
description	Hydrogen is identified as a useful technique to passivate defects within crystalline silicon. However, the effect of hydrogen passivation for a silicon surface is normally characterized as a reduction in surface recombination velocity (SRV), which is not enough to reflect the detailed changes of electronic properties, such as defect density, defect energy levels, and capture cross section, of silicon surface states. In this paper, we utilized the transient capacitance measurement to characterize the detailed electronic properties of silicon surface states before and after hydrogenation. The differences, in terms of the effects of hydrogenation on silicon surface states, either in copper contaminated conditions or clean conditions, are presented and discussed.
url	http://dx.doi.org/10.1063/1.5122253
work_keys_str_mv	AT lihuisong investigationontheimpactofhydrogenonthepassivationofsiliconsurfacestatesincleanandcoppercontaminatedconditions AT derenyang investigationontheimpactofhydrogenonthepassivationofsiliconsurfacestatesincleanandcoppercontaminatedconditions AT xuegongyu investigationontheimpactofhydrogenonthepassivationofsiliconsurfacestatesincleanandcoppercontaminatedconditions
_version_	1724923497491202048

Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions

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