High Gauge Factor Piezoresistors Using Aluminium Induced Crystallisation of Silicon at Low Thermal Budget

High Gauge Factor Piezoresistors Using Aluminium Induced Crystallisation of Silicon at Low Thermal Budget

This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on...

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Bibliographic Details
Main Authors: Ian Chuang, Aron Michael, Chee Yee Kwok
Format: Article
Language:English
Published: MDPI AG 2017-09-01
Series:Proceedings
Subjects:
AIC polysilicon
piezo-resistor
low thermal budget
gauge factor
Online Access:https://www.mdpi.com/2504-3900/1/4/354
Description
Summary:This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on aluminium layer, we are able to increase and control the gauge factor of the polysilicon films formed by AIC at 450 °C. Piezo-resistors made from the polysilicon films are integrated on microcantilever beams to measure their gauge factors. Gauge factors as high as 62 is obtained for 2 × 1018/cm3 phosphorus doping level in the precursor amorphous silicon film. The measured gauge factors are significantly higher than previously reported values for polysilicon films.
ISSN:2504-3900

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