Optoelectronic properties of the InSe/Ga2S3 interfaces
In this work, the nature of formation, the structural, optical and optoelectronic properties of the InSe/Ga2S3 interfaces are explored by the Scanning electron microscopy, energy dispersive X-ray, X-ray diffraction, optical spectrophotometry and temperature dependent dark and photoconductivity. The...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2018-09-01
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| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718307502 |