An Improved Equivalent Simulation Model for CMOS Integrated Hall Plates
An improved equivalent simulation model for a CMOS-integrated Hall plate is described in this paper. Compared with existing models, this model covers voltage dependent non-linear effects, geometrical effects, temperature effects and packaging stress influences, and only includes a small number of ph...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2011-06-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1424-8220/11/6/6284/ |