Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Effect of Annealing Temperature for Ni/AlO<sub>x</sub>/Pt RRAM Devices Fabricated with Solution-Based Dielectric

Resistive random access memory (RRAM) devices with Ni/AlO<sub>x</sub>/Pt-structure were manufactured by deposition of a solution-based aluminum oxide (AlO<sub>x</sub>) dielectric layer which was subsequently annealed at temperatures from 200 °C to 300 °C, in increments of 25...

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Bibliographic Details
Main Authors: Zongjie Shen, Yanfei Qi, Ivona Z. Mitrovic, Cezhou Zhao, Steve Hall, Li Yang, Tian Luo, Yanbo Huang, Chun Zhao
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Micromachines
Subjects:
bipolar resistive switching characteristics
annealing temperatures
solution-based dielectric
resistive random access memory (RRAM)
Online Access:https://www.mdpi.com/2072-666X/10/7/446

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