AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD

AES Studies of Heteroepitaxial SiC Films Deposited on Si and on Sapphire Substrates by MOCVD

Auger electron spectroscopy (AES) has been used to investigate the chemical composition of the heteroepitaxial silicon carbide films grown on Si (100) and sapphire (0001) substrates at 900 °C by the MOCVD technique using DEMS precursor. Auger spectra were obtained from the surface and as a function...

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Bibliographic Details
Main Authors:	R. E. Beisenov, R. Ebrahim, A. Zommorodian, Z. A. Mansurov, S. Zh. Tokmoldin, A. Ignatiev
Format:	Article
Language:	English
Published:	al-Farabi Kazakh National University 2013-07-01
Series:	Eurasian Chemico-Technological Journal
Online Access:	http://ect-journal.kz/index.php/ectj/article/view/332

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