Semiconductor quantum plasmons for high frequency thermal emission

Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5–15 μm wavelength region set by the doping level and the effective mass. Here, we demonstrate that volume plasmons can form in doped layers of widths of hundreds of nanometers, without the n...

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Main Authors:	Vasanelli Angela, Todorov Yanko, Dailly Baptiste, Cosme Sébastien, Gacemi Djamal, Haky Andrew, Sagnes Isabelle, Sirtori Carlo
Format:	Article
Language:	English
Published:	De Gruyter 2020-09-01
Series:	Nanophotonics
Subjects:	mid-infrared plasmons thermal emission
Online Access:	https://doi.org/10.1515/nanoph-2020-0413

id	doaj-3855564c3445434ba5c8898d91311714
record_format	Article
spelling	doaj-3855564c3445434ba5c8898d913117142021-09-06T19:20:37ZengDe GruyterNanophotonics2192-86062192-86142020-09-0110160761510.1515/nanoph-2020-0413Semiconductor quantum plasmons for high frequency thermal emissionVasanelli Angela0Todorov Yanko1Dailly Baptiste2Cosme Sébastien3Gacemi Djamal4Haky Andrew5Sagnes Isabelle6Sirtori Carlo7Laboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, FranceLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, FranceLaboratoire Matériaux et Phénomènes Quantiques, CNRS, Université de Paris, Paris, FranceLaboratoire Matériaux et Phénomènes Quantiques, CNRS, Université de Paris, Paris, FranceLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, FranceLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, FranceCentre for Nanosciences and Nanotechnology, CNRS, Universite Paris-Saclay, UMR 9001, 10 Boulevard Thomas Gobert, 91120 Palaiseau, FranceLaboratoire de Physique de l’Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université de Paris, Paris, FrancePlasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5–15 μm wavelength region set by the doping level and the effective mass. Here, we demonstrate that volume plasmons can form in doped layers of widths of hundreds of nanometers, without the need of potential barrier for electronic confinement. Their strong interaction with light makes them perfect absorbers and therefore suitable for incandescent emission. Moreover, by injecting microwave current in the doped layer, we can modulate the temperature of the electron gas. We have fabricated devices for high frequency thermal emission and measured incandescent emission up to 50 MHz, limited by the cutoff of our detector. The frequency-dependent thermal emission is very well reproduced by our theoretical model that let us envision a frequency cutoff in the tens of GHz.https://doi.org/10.1515/nanoph-2020-0413mid-infraredplasmonsthermal emission
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Vasanelli Angela Todorov Yanko Dailly Baptiste Cosme Sébastien Gacemi Djamal Haky Andrew Sagnes Isabelle Sirtori Carlo
spellingShingle	Vasanelli Angela Todorov Yanko Dailly Baptiste Cosme Sébastien Gacemi Djamal Haky Andrew Sagnes Isabelle Sirtori Carlo Semiconductor quantum plasmons for high frequency thermal emission Nanophotonics mid-infrared plasmons thermal emission
author_facet	Vasanelli Angela Todorov Yanko Dailly Baptiste Cosme Sébastien Gacemi Djamal Haky Andrew Sagnes Isabelle Sirtori Carlo
author_sort	Vasanelli Angela
title	Semiconductor quantum plasmons for high frequency thermal emission
title_short	Semiconductor quantum plasmons for high frequency thermal emission
title_full	Semiconductor quantum plasmons for high frequency thermal emission
title_fullStr	Semiconductor quantum plasmons for high frequency thermal emission
title_full_unstemmed	Semiconductor quantum plasmons for high frequency thermal emission
title_sort	semiconductor quantum plasmons for high frequency thermal emission
publisher	De Gruyter
series	Nanophotonics
issn	2192-8606 2192-8614
publishDate	2020-09-01
description	Plasmons in heavily doped semiconductor layers are optically active excitations with sharp resonances in the 5–15 μm wavelength region set by the doping level and the effective mass. Here, we demonstrate that volume plasmons can form in doped layers of widths of hundreds of nanometers, without the need of potential barrier for electronic confinement. Their strong interaction with light makes them perfect absorbers and therefore suitable for incandescent emission. Moreover, by injecting microwave current in the doped layer, we can modulate the temperature of the electron gas. We have fabricated devices for high frequency thermal emission and measured incandescent emission up to 50 MHz, limited by the cutoff of our detector. The frequency-dependent thermal emission is very well reproduced by our theoretical model that let us envision a frequency cutoff in the tens of GHz.
topic	mid-infrared plasmons thermal emission
url	https://doi.org/10.1515/nanoph-2020-0413
work_keys_str_mv	AT vasanelliangela semiconductorquantumplasmonsforhighfrequencythermalemission AT todorovyanko semiconductorquantumplasmonsforhighfrequencythermalemission AT daillybaptiste semiconductorquantumplasmonsforhighfrequencythermalemission AT cosmesebastien semiconductorquantumplasmonsforhighfrequencythermalemission AT gacemidjamal semiconductorquantumplasmonsforhighfrequencythermalemission AT hakyandrew semiconductorquantumplasmonsforhighfrequencythermalemission AT sagnesisabelle semiconductorquantumplasmonsforhighfrequencythermalemission AT sirtoricarlo semiconductorquantumplasmonsforhighfrequencythermalemission
_version_	1717776335292596224

Semiconductor quantum plasmons for high frequency thermal emission

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