Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Abstract High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm2) of AlGaN/AlN/GaN heteros...

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Bibliographic Details
Main Authors:	Xin Chen, Jianqi Dong, Chenguang He, Longfei He, Zhitao Chen, Shuti Li, Kang Zhang, Xingfu Wang, Zhong Lin Wang
Format:	Article
Language:	English
Published:	SpringerOpen 2021-02-01
Series:	Nano-Micro Letters
Subjects:	AlGaN/AlN/GaN heterojunction Epitaxial lift-off Flexible membrane Two-dimensional electron gas Piezotronic effect
Online Access:	https://doi.org/10.1007/s40820-021-00589-4

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