Contact Resistance Reduction of WS<sub>2</sub> FETs Using High-Pressure Hydrogen Annealing

Contact Resistance Reduction of WS<sub>2</sub> FETs Using High-Pressure Hydrogen Annealing

The transition metal dichalcogenides (TMDCs) have been extensively investigated for various applications such as logic, memory and optical devices, and sensors. The pressing challenge in the research of TMDCs is the electrical performance limited by the high contact resistance. We report more than 5...

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Bibliographic Details
Main Authors: Yun Ji Kim, Woojin Park, Jin Ho Yang, Yonghun Kim, Byoung Hun Lee
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Contact resistance
Fermi-level depinning
high-pressure hydrogen annealing
WS₂ FET
Online Access:https://ieeexplore.ieee.org/document/8170214/
Description
Summary:The transition metal dichalcogenides (TMDCs) have been extensively investigated for various applications such as logic, memory and optical devices, and sensors. The pressing challenge in the research of TMDCs is the electrical performance limited by the high contact resistance. We report more than 5000 times reduction in the contact resistance of WS2 field-effect transistor (FET) with Ti contact (81 M&#x03A9; &#x03BC;m to 14.6 k&#x03A9; &#x03BC;m) by high-pressure hydrogen annealing. Schottky barrier height reduction appears to play a major role in the reduction of the contact resistance. This process can be used to reduce the contact resistance even further by combining with a doping technique for TMDCs and a contact metal optimization for TMDC FETs.
ISSN:2168-6734

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