Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED

Effects of Different InGaN/GaN Electron Emission Layers/Interlayers on Performance of a UV-A LED

In this study, we investigated the effects of InGaN/GaN-based interlayer (IL) and electron emitting layer (EEL) consisting of a GaN barrier layer grown with different metal-organic (MO) precursors of gallium (Ga), which were grown underneath the active layer. The growth behavior of GaN with triethyl...

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Bibliographic Details
Main Authors: Dohyun Kim, Keun Man Song, UiJin Jung, Subin Kim, Dong Su Shin, Jinsub Park
Format: Article
Language:English
Published: MDPI AG 2020-02-01
Series:Applied Sciences
Subjects:
uv-led
interlayer
gan
mocvd
electron emission layer
Online Access:https://www.mdpi.com/2076-3417/10/4/1514

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