High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

Polyvinyl alcohol (PVA) and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier m...

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Main Authors:	Murali Gedda, Nimmakayala V. V. Subbarao, Sk. Md. Obaidulla, Dipak K. Goswami
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2013-11-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4834355

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spelling	doaj-3794f5c0b36c498c98408935ffd8e2022020-11-24T21:17:49ZengAIP Publishing LLCAIP Advances2158-32262013-11-01311112123112123-710.1063/1.4834355022311ADVHigh carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectricMurali Gedda0Nimmakayala V. V. Subbarao1Sk. Md. Obaidulla2Dipak K. Goswami3Department of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, IndiaCentre for Nano Technology, Indian Institute of Technology Guwahati, Guwahati-781039, IndiaDepartment of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, IndiaDepartment of Physics, Indian Institute of Technology Guwahati, Guwahati-781039, IndiaPolyvinyl alcohol (PVA) and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF) value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.http://dx.doi.org/10.1063/1.4834355
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Murali Gedda Nimmakayala V. V. Subbarao Sk. Md. Obaidulla Dipak K. Goswami
spellingShingle	Murali Gedda Nimmakayala V. V. Subbarao Sk. Md. Obaidulla Dipak K. Goswami High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric AIP Advances
author_facet	Murali Gedda Nimmakayala V. V. Subbarao Sk. Md. Obaidulla Dipak K. Goswami
author_sort	Murali Gedda
title	High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric
title_short	High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric
title_full	High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric
title_fullStr	High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric
title_full_unstemmed	High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric
title_sort	high carrier mobility of copc wires based field-effect transistors using bi-layer gate dielectric
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2013-11-01
description	Polyvinyl alcohol (PVA) and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF) value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs.
url	http://dx.doi.org/10.1063/1.4834355
work_keys_str_mv	AT muraligedda highcarriermobilityofcopcwiresbasedfieldeffecttransistorsusingbilayergatedielectric AT nimmakayalavvsubbarao highcarriermobilityofcopcwiresbasedfieldeffecttransistorsusingbilayergatedielectric AT skmdobaidulla highcarriermobilityofcopcwiresbasedfieldeffecttransistorsusingbilayergatedielectric AT dipakkgoswami highcarriermobilityofcopcwiresbasedfieldeffecttransistorsusingbilayergatedielectric
_version_	1726011878293897216

High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

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