High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric
Polyvinyl alcohol (PVA) and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier m...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4834355 |
| Summary: | Polyvinyl alcohol (PVA) and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF) value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs. |
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| ISSN: | 2158-3226 |