A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to...
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Taylor & Francis Group
2015-06-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | http://dx.doi.org/10.1088/1468-6996/16/3/036005 |
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doaj-37931c1b56ca4b6392dca9c18e65b8702020-11-25T02:06:36ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142015-06-0116310.1088/1468-6996/16/3/03600511661311A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applicationsLucie Mazet0Sang Mo Yang1Sergei V Kalinin2Sylvie Schamm-Chardon3Catherine Dubourdieu4Université de LyonOak Ridge National LaboratoryOak Ridge National LaboratoryUniversité de ToulouseUniversité de LyonSrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.http://dx.doi.org/10.1088/1468-6996/16/3/036005molecular beam epitaxyferroelectricsemiconductor |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Lucie Mazet Sang Mo Yang Sergei V Kalinin Sylvie Schamm-Chardon Catherine Dubourdieu |
| spellingShingle |
Lucie Mazet Sang Mo Yang Sergei V Kalinin Sylvie Schamm-Chardon Catherine Dubourdieu A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications Science and Technology of Advanced Materials molecular beam epitaxy ferroelectric semiconductor |
| author_facet |
Lucie Mazet Sang Mo Yang Sergei V Kalinin Sylvie Schamm-Chardon Catherine Dubourdieu |
| author_sort |
Lucie Mazet |
| title |
A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications |
| title_short |
A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications |
| title_full |
A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications |
| title_fullStr |
A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications |
| title_full_unstemmed |
A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications |
| title_sort |
review of molecular beam epitaxy of ferroelectric batio3 films on si, ge and gaas substrates and their applications |
| publisher |
Taylor & Francis Group |
| series |
Science and Technology of Advanced Materials |
| issn |
1468-6996 1878-5514 |
| publishDate |
2015-06-01 |
| description |
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. |
| topic |
molecular beam epitaxy ferroelectric semiconductor |
| url |
http://dx.doi.org/10.1088/1468-6996/16/3/036005 |
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