Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2

Low-temperature magnetotransport studies are reported for (112)Cd3As2 films grown on (111)CdTe by molecular beam epitaxy as a function of the Cd3As2 film thickness. All films show Shubnikov-de Haas oscillations. An even-integer quantum Hall effect is observed for films thinner than 70 nm. For the th...

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Main Authors:	Manik Goyal, Luca Galletti, Salva Salmani-Rezaie, Timo Schumann, David A. Kealhofer, Susanne Stemmer
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-02-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.5016866

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spelling	doaj-36724df146c4463db82920fbdf2ccacd2020-11-24T21:37:56ZengAIP Publishing LLCAPL Materials2166-532X2018-02-0162026105026105-610.1063/1.5016866006802APMThickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2Manik Goyal0Luca Galletti1Salva Salmani-Rezaie2Timo Schumann3David A. Kealhofer4Susanne Stemmer5Materials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USADepartment of Physics, University of California, Santa Barbara, California 93106-9530, USAMaterials Department, University of California, Santa Barbara, California 93106-5050, USALow-temperature magnetotransport studies are reported for (112)Cd3As2 films grown on (111)CdTe by molecular beam epitaxy as a function of the Cd3As2 film thickness. All films show Shubnikov-de Haas oscillations. An even-integer quantum Hall effect is observed for films thinner than 70 nm. For the thinnest films, the bulk is gapped and transport at low temperatures occurs only via the gapless, two-dimensional states. The lowest Landau level is reached at ∼10 T, and the longitudinal resistance nearly vanishes at the plateaus in the Hall resistance. The results are discussed in the context of the current theoretical understanding of topological surface states in three-dimensional Dirac semimetals.http://dx.doi.org/10.1063/1.5016866
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Manik Goyal Luca Galletti Salva Salmani-Rezaie Timo Schumann David A. Kealhofer Susanne Stemmer
spellingShingle	Manik Goyal Luca Galletti Salva Salmani-Rezaie Timo Schumann David A. Kealhofer Susanne Stemmer Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2 APL Materials
author_facet	Manik Goyal Luca Galletti Salva Salmani-Rezaie Timo Schumann David A. Kealhofer Susanne Stemmer
author_sort	Manik Goyal
title	Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2
title_short	Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2
title_full	Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2
title_fullStr	Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2
title_full_unstemmed	Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2
title_sort	thickness dependence of the quantum hall effect in films of the three-dimensional dirac semimetal cd3as2
publisher	AIP Publishing LLC
series	APL Materials
issn	2166-532X
publishDate	2018-02-01
description	Low-temperature magnetotransport studies are reported for (112)Cd3As2 films grown on (111)CdTe by molecular beam epitaxy as a function of the Cd3As2 film thickness. All films show Shubnikov-de Haas oscillations. An even-integer quantum Hall effect is observed for films thinner than 70 nm. For the thinnest films, the bulk is gapped and transport at low temperatures occurs only via the gapless, two-dimensional states. The lowest Landau level is reached at ∼10 T, and the longitudinal resistance nearly vanishes at the plateaus in the Hall resistance. The results are discussed in the context of the current theoretical understanding of topological surface states in three-dimensional Dirac semimetals.
url	http://dx.doi.org/10.1063/1.5016866
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Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2

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