Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes

To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), str...

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Bibliographic Details
Main Authors: Yang Huang, Zhiqiang Liu, Xiaoyan Yi, Yao Guo, Shaoteng Wu, Guodong Yuan, JunXi Wang, Guohong Wang, Jinmin Li
Format: Article
Language:English
Published: AIP Publishing LLC 2016-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4948511
Description
Summary:To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.
ISSN:2158-3226

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