Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature

Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature

Bibliographic Details
Main Authors: Iwata Takashi, Matsumoto Taketoshi, Terakawa Sumio, Kobayashi Hikaru
Format: Article
Language:English
Published: De Gruyter 2010-12-01
Series:Open Physics
Subjects:
nitric acid oxidation
aluminum oxide
mos
gate insulator
Online Access:https://doi.org/10.2478/s11534-010-0014-z
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spelling doaj-3605be8b803242b58a64f310b5cbcdc32021-09-05T14:01:38ZengDe GruyterOpen Physics2391-54712010-12-01861015102010.2478/s11534-010-0014-zFabrication of Al2O3/Al structure by nitric acid oxidation at room temperatureIwata Takashi0Matsumoto Taketoshi1Terakawa Sumio2Kobayashi Hikaru3Institute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, JapanInstitute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, JapanInstitute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, JapanInstitute of Scientific and Industrial Research, Osaka University and CREST, Japan Science and Technology Agency, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japanhttps://doi.org/10.2478/s11534-010-0014-znitric acid oxidationaluminum oxidemosgate insulator
collection DOAJ
language English
format Article
sources DOAJ
author Iwata Takashi
Matsumoto Taketoshi
Terakawa Sumio
Kobayashi Hikaru
spellingShingle Iwata Takashi
Matsumoto Taketoshi
Terakawa Sumio
Kobayashi Hikaru
Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature
Open Physics
nitric acid oxidation
aluminum oxide
mos
gate insulator
author_facet Iwata Takashi
Matsumoto Taketoshi
Terakawa Sumio
Kobayashi Hikaru
author_sort Iwata Takashi
title Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature
title_short Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature
title_full Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature
title_fullStr Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature
title_full_unstemmed Fabrication of Al2O3/Al structure by nitric acid oxidation at room temperature
title_sort fabrication of al2o3/al structure by nitric acid oxidation at room temperature
publisher De Gruyter
series Open Physics
issn 2391-5471
publishDate 2010-12-01
topic nitric acid oxidation
aluminum oxide
mos
gate insulator
url https://doi.org/10.2478/s11534-010-0014-z
work_keys_str_mv AT iwatatakashi fabricationofal2o3alstructurebynitricacidoxidationatroomtemperature
AT matsumototaketoshi fabricationofal2o3alstructurebynitricacidoxidationatroomtemperature
AT terakawasumio fabricationofal2o3alstructurebynitricacidoxidationatroomtemperature
AT kobayashihikaru fabricationofal2o3alstructurebynitricacidoxidationatroomtemperature
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