Design and investigation of a dual source and U-shaped gate TFET with n buffer and SiGe pocket
In this paper, we propose and simulate a novel structure of a double source and U-shaped gate tunnel field effect transistor (DS-UTFET) with an n buffer layer and n+ SiGe pocket. In order to reduce the OFF-state current, there is an n buffer layer under the n+ SiGe pocket in a sandwich stack; moreov...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0006510 |