Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device

Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device

The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT. The change of VT for Si-M...

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Main Authors: Hsieh Wen-Ching, Daniel Lee Hao-Tien, Jon Fuh-Cheng, Wu Shich-Chuan, Heh Dawei, Tsai Tzu-I
Format: Article
Language:English
Published: EDP Sciences 2016-01-01
Series:MATEC Web of Conferences
Online Access:http://dx.doi.org/10.1051/matecconf/20167105007
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spelling doaj-35bab7429c564169837e2dd81d921f142021-04-02T09:59:15ZengEDP SciencesMATEC Web of Conferences2261-236X2016-01-01710500710.1051/matecconf/20167105007matecconf_ccpe2016_05007Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS DeviceHsieh Wen-Ching0Daniel Lee Hao-Tien1Jon Fuh-Cheng2Wu Shich-Chuan3Heh Dawei4Tsai Tzu-I5Minghsin Universuty of Science and TechnologyTreasure Giant Technology Inc.Southern Taiwan University of Science and TechnologyNational Nano Device LaboratoriesTaiwan Semiconductor Manufacturing Company LimitedUnited Microelectronics CorporationThe Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT. The change of VT for Si-MONOS after gamma irradiation has a strong correlation to the TID of gamma ray exposure as well. The Si-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile TID radiation sensing in the future.http://dx.doi.org/10.1051/matecconf/20167105007
collection DOAJ
language English
format Article
sources DOAJ
author Hsieh Wen-Ching
Daniel Lee Hao-Tien
Jon Fuh-Cheng
Wu Shich-Chuan
Heh Dawei
Tsai Tzu-I
spellingShingle Hsieh Wen-Ching
Daniel Lee Hao-Tien
Jon Fuh-Cheng
Wu Shich-Chuan
Heh Dawei
Tsai Tzu-I
Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device
MATEC Web of Conferences
author_facet Hsieh Wen-Ching
Daniel Lee Hao-Tien
Jon Fuh-Cheng
Wu Shich-Chuan
Heh Dawei
Tsai Tzu-I
author_sort Hsieh Wen-Ching
title Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device
title_short Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device
title_full Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device
title_fullStr Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device
title_full_unstemmed Total Ionization Radiation Sensor Performance Improvement by Using Si-rich MONOS Device
title_sort total ionization radiation sensor performance improvement by using si-rich monos device
publisher EDP Sciences
series MATEC Web of Conferences
issn 2261-236X
publishDate 2016-01-01
description The Si-rich metal -oxide-nitride-oxide-silicon (hereafter Si-MONOS) can be candidates for non-volatile total ionization dose (TID) radiation sensors. In the case of Si-MONOS gamma radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT. The change of VT for Si-MONOS after gamma irradiation has a strong correlation to the TID of gamma ray exposure as well. The Si-MONOS capacitor device in this study has demonstrated the better feasibility for non-volatile TID radiation sensing in the future.
url http://dx.doi.org/10.1051/matecconf/20167105007
work_keys_str_mv AT hsiehwenching totalionizationradiationsensorperformanceimprovementbyusingsirichmonosdevice
AT danielleehaotien totalionizationradiationsensorperformanceimprovementbyusingsirichmonosdevice
AT jonfuhcheng totalionizationradiationsensorperformanceimprovementbyusingsirichmonosdevice
AT wushichchuan totalionizationradiationsensorperformanceimprovementbyusingsirichmonosdevice
AT hehdawei totalionizationradiationsensorperformanceimprovementbyusingsirichmonosdevice
AT tsaitzui totalionizationradiationsensorperformanceimprovementbyusingsirichmonosdevice
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