Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer

Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer

High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination for thin layers, which epitaxial ones generally are....

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Bibliographic Details
Main Authors: Milan Tapajna, Jaroslav Pjencak, Andrej Vrbicky, Pavol Kudela, Ladislav Harmatha
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2004-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
epitaxial layer
bipolar
unipolar
material
measurement.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/432
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spelling doaj-358d28fe8862451bac6f68c3af4fdde72021-10-11T08:03:01ZengVSB-Technical University of OstravaAdvances in Electrical and Electronic Engineering1336-13761804-31192004-01-0132265268476Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial LayerMilan TapajnaJaroslav PjencakAndrej VrbickyPavol KudelaLadislav HarmathaHigh quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination for thin layers, which epitaxial ones generally are. We have designed diode structure with n+n/p+and  p+p/n+ epitaxial layer for open circuit voltage decay (OCVD) technigue. In such a structure, injected carriers are constrained within lightly doped base by potential barriers of junction and high-low contact and their concentration can then decrease only by recombination. Carrier lifetime obtained by this manner yields information mainly about the defect properties of epitaxial layer. Performing OCVD measurement for high-level injection condition, also tn and tp could be evaluated.http://advances.utc.sk/index.php/AEEE/article/view/432epitaxial layerbipolarunipolarmaterialmeasurement.
collection DOAJ
language English
format Article
sources DOAJ
author Milan Tapajna
Jaroslav Pjencak
Andrej Vrbicky
Pavol Kudela
Ladislav Harmatha
spellingShingle Milan Tapajna
Jaroslav Pjencak
Andrej Vrbicky
Pavol Kudela
Ladislav Harmatha
Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer
Advances in Electrical and Electronic Engineering
epitaxial layer
bipolar
unipolar
material
measurement.
author_facet Milan Tapajna
Jaroslav Pjencak
Andrej Vrbicky
Pavol Kudela
Ladislav Harmatha
author_sort Milan Tapajna
title Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer
title_short Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer
title_full Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer
title_fullStr Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer
title_full_unstemmed Application of Open Circuit Voltage Decay to the Characterization of p/n+ and n/p+ Epitaxial Layer
title_sort application of open circuit voltage decay to the characterization of p/n+ and n/p+ epitaxial layer
publisher VSB-Technical University of Ostrava
series Advances in Electrical and Electronic Engineering
issn 1336-1376
1804-3119
publishDate 2004-01-01
description High quality silicon epitaxial layers are inevitable in bipolar and/or unipolar technology. However, its properties are not as easy characterized as those of bulk material. The recombination lifetime is dominated by surface/interface recombination for thin layers, which epitaxial ones generally are. We have designed diode structure with n+n/p+and  p+p/n+ epitaxial layer for open circuit voltage decay (OCVD) technigue. In such a structure, injected carriers are constrained within lightly doped base by potential barriers of junction and high-low contact and their concentration can then decrease only by recombination. Carrier lifetime obtained by this manner yields information mainly about the defect properties of epitaxial layer. Performing OCVD measurement for high-level injection condition, also tn and tp could be evaluated.
topic epitaxial layer
bipolar
unipolar
material
measurement.
url http://advances.utc.sk/index.php/AEEE/article/view/432
work_keys_str_mv AT milantapajna applicationofopencircuitvoltagedecaytothecharacterizationofpnandnpepitaxiallayer
AT jaroslavpjencak applicationofopencircuitvoltagedecaytothecharacterizationofpnandnpepitaxiallayer
AT andrejvrbicky applicationofopencircuitvoltagedecaytothecharacterizationofpnandnpepitaxiallayer
AT pavolkudela applicationofopencircuitvoltagedecaytothecharacterizationofpnandnpepitaxiallayer
AT ladislavharmatha applicationofopencircuitvoltagedecaytothecharacterizationofpnandnpepitaxiallayer
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