The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties
This paper addresses the high-frequency performance limitations of graphene field-effect transistors (GFETs) caused by material imperfections. To understand these limitations, we performed a comprehensive study of the relationship between the quality of graphene and surrounding materials and the hig...
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9070193/ |
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doaj-356d226b5d3d4e8687e7e28e2f3bd0e52021-03-29T18:51:32ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01845746410.1109/JEDS.2020.29886309070193The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport PropertiesMuhammad Asad0Marlene Bonmann1Xinxin Yang2Andrei Vorobiev3Kjell Jeppson4Luca Banszerus5Martin Otto6Christoph Stampfer7Daniel Neumaier8Jan Stake9Microtechnology and Nanoscience Department, Chalmers University of Technology, Gothenburg, SwedenMicrotechnology and Nanoscience Department, Chalmers University of Technology, Gothenburg, SwedenMicrotechnology and Nanoscience Department, Chalmers University of Technology, Gothenburg, SwedenMicrotechnology and Nanoscience Department, Chalmers University of Technology, Gothenburg, SwedenMicrotechnology and Nanoscience Department, Chalmers University of Technology, Gothenburg, Sweden2nd Institute of Physics, RWTH Aachen University, Aachen, GermanyAdvanced Microelectronic Center Aachen, AMO GmbH, Aachen, Germany2nd Institute of Physics, RWTH Aachen University, Aachen, GermanyAdvanced Microelectronic Center Aachen, AMO GmbH, Aachen, GermanyMicrotechnology and Nanoscience Department, Chalmers University of Technology, Gothenburg, SwedenThis paper addresses the high-frequency performance limitations of graphene field-effect transistors (GFETs) caused by material imperfections. To understand these limitations, we performed a comprehensive study of the relationship between the quality of graphene and surrounding materials and the high-frequency performance of GFETs fabricated on a silicon chip. We measured the transit frequency (f<sub>T</sub>) and the maximum frequency of oscillation (f<sub>max</sub>) for a set of GFETs across the chip, and as a measure of the material quality, we chose low-field carrier mobility. The low-field mobility varied across the chip from 600 cm<sup>2</sup>/Vs to 2000 cm<sup>2</sup>/Vs, while the f<sub>T</sub> and f<sub>max</sub> frequencies varied from 20 GHz to 37 GHz. The relationship between these frequencies and the low-field mobility was observed experimentally and explained using a methodology based on a small-signal equivalent circuit model with parameters extracted from the drain resistance model and the charge-carrier velocity saturation model. Sensitivity analysis clarified the effects of equivalent-circuit parameters on the f<sub>T</sub> and f<sub>max</sub> frequencies. To improve the GFET high-frequency performance, the transconductance was the most critical parameter, which could be improved by increasing the charge-carrier saturation velocity by selecting adjacent dielectric materials with optical phonon energies higher than that of SiO<sub>2</sub>.https://ieeexplore.ieee.org/document/9070193/Graphenefield-effect transistorshigh frequencytransit frequencymaximum frequency of oscillationmicrowave electronics |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Muhammad Asad Marlene Bonmann Xinxin Yang Andrei Vorobiev Kjell Jeppson Luca Banszerus Martin Otto Christoph Stampfer Daniel Neumaier Jan Stake |
| spellingShingle |
Muhammad Asad Marlene Bonmann Xinxin Yang Andrei Vorobiev Kjell Jeppson Luca Banszerus Martin Otto Christoph Stampfer Daniel Neumaier Jan Stake The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties IEEE Journal of the Electron Devices Society Graphene field-effect transistors high frequency transit frequency maximum frequency of oscillation microwave electronics |
| author_facet |
Muhammad Asad Marlene Bonmann Xinxin Yang Andrei Vorobiev Kjell Jeppson Luca Banszerus Martin Otto Christoph Stampfer Daniel Neumaier Jan Stake |
| author_sort |
Muhammad Asad |
| title |
The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties |
| title_short |
The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties |
| title_full |
The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties |
| title_fullStr |
The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties |
| title_full_unstemmed |
The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties |
| title_sort |
dependence of the high-frequency performance of graphene field-effect transistors on channel transport properties |
| publisher |
IEEE |
| series |
IEEE Journal of the Electron Devices Society |
| issn |
2168-6734 |
| publishDate |
2020-01-01 |
| description |
This paper addresses the high-frequency performance limitations of graphene field-effect transistors (GFETs) caused by material imperfections. To understand these limitations, we performed a comprehensive study of the relationship between the quality of graphene and surrounding materials and the high-frequency performance of GFETs fabricated on a silicon chip. We measured the transit frequency (f<sub>T</sub>) and the maximum frequency of oscillation (f<sub>max</sub>) for a set of GFETs across the chip, and as a measure of the material quality, we chose low-field carrier mobility. The low-field mobility varied across the chip from 600 cm<sup>2</sup>/Vs to 2000 cm<sup>2</sup>/Vs, while the f<sub>T</sub> and f<sub>max</sub> frequencies varied from 20 GHz to 37 GHz. The relationship between these frequencies and the low-field mobility was observed experimentally and explained using a methodology based on a small-signal equivalent circuit model with parameters extracted from the drain resistance model and the charge-carrier velocity saturation model. Sensitivity analysis clarified the effects of equivalent-circuit parameters on the f<sub>T</sub> and f<sub>max</sub> frequencies. To improve the GFET high-frequency performance, the transconductance was the most critical parameter, which could be improved by increasing the charge-carrier saturation velocity by selecting adjacent dielectric materials with optical phonon energies higher than that of SiO<sub>2</sub>. |
| topic |
Graphene field-effect transistors high frequency transit frequency maximum frequency of oscillation microwave electronics |
| url |
https://ieeexplore.ieee.org/document/9070193/ |
| work_keys_str_mv |
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