The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

The Dependence of the High-Frequency Performance of Graphene Field-Effect Transistors on Channel Transport Properties

This paper addresses the high-frequency performance limitations of graphene field-effect transistors (GFETs) caused by material imperfections. To understand these limitations, we performed a comprehensive study of the relationship between the quality of graphene and surrounding materials and the hig...

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Bibliographic Details
Main Authors: Muhammad Asad, Marlene Bonmann, Xinxin Yang, Andrei Vorobiev, Kjell Jeppson, Luca Banszerus, Martin Otto, Christoph Stampfer, Daniel Neumaier, Jan Stake
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Graphene
field-effect transistors
high frequency
transit frequency
maximum frequency of oscillation
microwave electronics
Online Access:https://ieeexplore.ieee.org/document/9070193/

Internet

https://ieeexplore.ieee.org/document/9070193/

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